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Abstract : |
X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the antimony segregation at Ge surface. Heat treatments of various durations have been carried out under vacuum at T=600 degreesC. Etching Ge surface with Argon ions prior to the heat treament enhances drastically the segregation process. A high value of the antimony diffusion coefficient (D = 7 X 10(-10) cm(2)/s) was obtained from the experimental data. A shift of the Ge core levels towards the high binding energies was observed as the dopant surface density increases. The shift was related to the band bending that results from a high density of surface states. (C) 2001 Elsevier Science B.V. All rights reserved., |
