HARMONIC AND INTERMODULATION GENERATION IN GAAS INP INGAAS AND SI SEMICONDUCTORS
| Author(s) : | M.T. Abuelma’atti, |
| Publisher : | PERGAMON-ELSEVIER SCIENCE LTD |
| Publication Date : | 1994 |
| ISSN : | N/A |
| Abstract : | A Fourier-series model describing the nonlinear drift velocity-field characteristic in GaAs, InP, InGaAs and Si semiconductors is presented.Using this model, closed-form expressions are obtained for the harmonic and intermodulation performance of semiconductors due to the nonlinear drift velocity-field characteristic., |