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Abstract : |
The undercutting process of thermal SiO2 microcantilevers with different orientations on (100) Si wafer was studied. The silicon substrate was removed by anisotropic chemical etching with a 25 wt. % aqueous solution of TMAH or a 30 wt. % aqueous KOH solution at 80 آ°C. It was found that oriented cantilevers were undercutting frontally along the length and oriented cantilevers experience undercutting along the width of the cantilever, which is a less time consuming process. The studies showed that the orientation of SiO2 microbridges enables theirs fabrication on a (100) oriented Si substrate., |
